Ev pl 44 pdf

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Document Information click to expand document information Description: Ev-plpdf. Original Title Ev-plpdf.

Did you find this document useful? Is this content inappropriate? Report this Document. We now turn to the spatial distribution of the 3. The hydrogen-annealed sample was mapped at a spatial resolution of nm, for a total of 1. The integration time was 10 ms per point. For the reference sample, the PL intensity was essentially zero except for a few distinct spots Fig. These localized emission centers showed the characteristic defect emission at 3. Figure 3 shows a PL map of the entire hydrogenated sample.

Here, weak defect emission was observed everywhere, but especially bright regions were detected as well. Map of the PL intensity of the 3. Inset: PL spectrum of one of the bright spots.

To see where these bright emitters come from, we took a scanning electron microscope SEM image and compared it to the PL map of the same area Fig. The SEM image shows surface pits that were caused by hydrogenation. The long axes of the surface pits are aligned along the c direction. As shown in Fig. SEM image left and map of the 3.

An overlaid image is in the center. The defect emission intensity strongly correlates with the surface pits. The PL intensity versus laser power was linear over the measured range Supplementary Fig. To obtain a useful benchmark comparison, we collected PL maps of hydrogenated Ga 2 O 3 and hydrothermal bulk ZnO under the same experimental conditions. The similarity between the emission energies of these two materials facilitated the comparison.

Both samples showed near-UV peaks and no other peaks down to nm Fig. The lack of defect peaks in ZnO e. The experimental conditions were 1 mW laser power and 10 ms integration time.

Figure 4 shows that the Ga 2 O 3 emitters have an intensity 50 times that of ZnO. Prior work measured an external quantum efficiency of 0. This relatively high value is consistent with the lack of an observed Stokes shift, which suggests a transition that does not involve significant lattice relaxation For example, an electron may transition from the valence band to a defect level.

If the defect does not relax, then energy is conserved by phonon emission by the hole. After the hole reaches the top of the valence band, the electron and hole recombine, creating a photon. What is the identity of these bright, localized emitters? Prior work has shown that hydrogen diffuses into Ga 2 O 3 and increases its conductivity Annealing in a reducing atmosphere such as hydrogen also decomposes the surface and may result in Ga-rich pits.

Elemental mapping of the pits does show evidence that the pits have an excess of Ga and also Si Supplementary Fig. It is plausible that the pits have a high population of surface or near-surface defects, which emit at 3. Regardless of their microscopic structure, these centers are strongly correlated with the surface pits. It is conceivable that these pits act as cavities that enhance the PL intensity. In conclusion, bright, localized near-UV 3.

The emission centers show efficient PL emission when excited by photons with energies above 3. The brightness of these emitters is remarkable given the generally weak luminescence observed in this material.

The strongest emission occurs near surface pits, which are created by annealing in hydrogen. We note that typical PL measurements average over a large spatial region. The results of this study provide a compelling case that one cannot assume that emission centers are distributed homogeneously throughout Ga 2 O 3. Rather, the bright emission centers observed here occur only at specific, localized regions on the surface.

These localized emitters are reminiscent of those found in 2D semiconductors 36 , which also involve defects that have not been positively identified. Future research will improve knowledge of such centers and potentially harness them for optoelectronic or quantum technologies.

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Pearton, S. A review of Ga 2 O 3 materials, processing, and devices. Google Scholar. Galazka, Z. Geller, S. Ahman, J. Acta Crystal. C 52 , Article Google Scholar. McCluskey, M. Point defects in Ga 2 O 3. He, H. First-principles study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and hexagonal phases. B 74 , 1—8 Peelaers, H.